silicon photo transistor 1. structure 1.1 chip size : 0.61mm x 0.61mm 1.2 chip thickness : 280 20um 1.3 metallization : top - al, bottom - au 1.4 passivation : silicon nitride 1.5 bonding pad size - emitter : 155um x 155um - base : 90um x 90um 2. guaranteed probed electrical characteristics (ta=25 ) symbol min typ max unit i ceo 100 na 450 1100 nm p 880 nm bv ceo 30 v bv cbo 40 v bv ebo 5v bv eco 4v v ces 300 mv tr/tf us h fe 1,000 2,200 - 3. hfe bin grade min max 1,000 1,500 1,200 1,800 1,500 2,200 4. maximum ratings (ta=25 ) symbol rating unit v ceo 30 v v eco 4v eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr bin grade a c-b voltage i ec =50ua i eb =50ua i cb =50ua v ce =10v, c=1ma auk corp. rise/fall time c-e saturation voltage e-b voltage parameter b c emitter-collector voltage collector-emitter voltage dc current gain OPB0606 v ce =10v condition 15/15(typ) parameter c-e leakage current e-c voltage spectrum sensitivity c-e voltage p eak sensing wavelengt h v ce =5v, i c =1ma, r l -1000 i c =5ma, i b =1ma i ce =500ua
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